High-voltage field effect transistors with wide-bandgap -Ga2O3 nanomembranes

نویسندگان

  • Wan Sik Hwang
  • Amit Verma
  • Hartwin Peelaers
  • Vladimir Protasenko
  • Sergei Rouvimov
  • Huili Xing
  • Alan Seabaugh
  • Wilfried Haensch
  • Chris Van de Walle
  • Zbigniew Galazka
  • Martin Albrecht
  • Roberto Fornari
  • Debdeep Jena
چکیده

Articles you may be interested in Publisher's Note: " High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes " [Appl. Phys. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors Appl. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications

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تاریخ انتشار 2014